A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire technique

Conference · Sat Aug 10 04:00:00 EDT 1991 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:7042113

Mahan, A H ^[1]; Vanecek, M ^[2]

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1. Solar Energy Research Institute, Golden, Colorado 80401-3393 (United States)
2. Institute of Physics, CSAV, Prague 8, CS-18040 (Czechoslovakia)

Constant photocurrent (CPM) and steady state photograting (SSPG) measurements have been performed on a series of hot wire (HW) and glow discharge (GD) hydrogenated amorphous silicon (a-Si:H) films, where the substrate temperature was varied in each case to affect the bonded H content. A reduction in the magnitude of the Staebler-Wronski effect, as observed by CPM after saturation light soaking, is seen when the H content is reduced in both sets of samples, but the lowest saturated CPM values and the highest SSPG diffusion lengths measured after saturation occur for HW films having H contents in the range 1-4 at.%. Although correlations exist between the number of excess defects produced by saturation light soaking and microscopic parameters such as the H content and the optical bandgap, there is not a simple correspondece for both sets of samples. This suggests that the Staebler-Wronski saturation may be influenced in part by the film microstructure.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 7042113
• Report Number(s): CONF-910225--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 234:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360604 -- Materials-- Corrosion
Erosion
& Degradation
AMORPHOUS STATE
DEFECTS
DIFFUSION LENGTH
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY DEPENDENCE
ENERGY LEVELS
EXCITED STATES
HYDROGEN ADDITIONS
LENGTH
METASTABLE STATES
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
TEMPERATURE EFFECTS