A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire technique
- Solar Energy Research Institute, Golden, Colorado 80401-3393 (United States)
- Institute of Physics, CSAV, Prague 8, CS-18040 (Czechoslovakia)
Constant photocurrent (CPM) and steady state photograting (SSPG) measurements have been performed on a series of hot wire (HW) and glow discharge (GD) hydrogenated amorphous silicon (a-Si:H) films, where the substrate temperature was varied in each case to affect the bonded H content. A reduction in the magnitude of the Staebler-Wronski effect, as observed by CPM after saturation light soaking, is seen when the H content is reduced in both sets of samples, but the lowest saturated CPM values and the highest SSPG diffusion lengths measured after saturation occur for HW films having H contents in the range 1-4 at.%. Although correlations exist between the number of excess defects produced by saturation light soaking and microscopic parameters such as the H content and the optical bandgap, there is not a simple correspondece for both sets of samples. This suggests that the Staebler-Wronski saturation may be influenced in part by the film microstructure.
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 7042113
- Report Number(s):
- CONF-910225--
- Journal Information:
- AIP Conference Proceedings (American Institute of Physics); (United States), Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Vol. 234:1; ISSN 0094-243X; ISSN APCPC
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360604 -- Materials-- Corrosion
Erosion
& Degradation
AMORPHOUS STATE
DEFECTS
DIFFUSION LENGTH
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY DEPENDENCE
ENERGY LEVELS
EXCITED STATES
HYDROGEN ADDITIONS
LENGTH
METASTABLE STATES
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
TEMPERATURE EFFECTS