Photo-induced structure metastability and the Staebler and Wronski Effect in a-Si:H
- Department of Phys. Astronomy, Univ of North Carolina, Chapel Hill, North Carolina 27599-3255 (United States)
- Department of ECE, Gifu Univ, 1-1 Yanagido, Gifu 501-11 (Japan)
- National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)
By measuring both the mechanical stress and the optoelectronic properties of a-Si:H films before and after light-soaking, we have examined the film structural stability in relation to its electronic stability. A photoinduced increase of the compression, in the order of 10{sup {minus}4} of the initial value, was found in both the glow discharge and hot-wire films. A factor of 4-6 photodegradation of the photoconductivity was obtained in the HW films deposited at T{sub S}{lt}360&hthinsp;{degree}C, but there was no photodegradation for the films deposited at 360{lt}T{sub S}{lt}440&hthinsp;{degree}C. Hence, there is no obvious relation between the changes in film structure (observed by IR and stress) and the Staebler{emdash}Wronski Effect (SWE). {copyright} {ital 1999 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 357196
- Report Number(s):
- CONF-980935--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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