Mechanism for the Staebler-Wronski effect in a -Si:H

Journal Article · Thu Aug 15 00:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.44.3403· OSTI ID:5238475

Biswas, R; Kwon, I; Soukoulis, C M ^[1]

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1. Microelectronics Research Center, Department of Physics, and Ames Laboratory, Iowa State University, Ames, Iowa (USA)

A mechanism is proposed for the Staebler-Wronski effect in {ital a}-Si:H. A bridge-bonded H interstitial defect is identified as the annealed state that can form a higher-energy metastable dangling-bond state in the light-soaked state. This defect can account for various features of light-induced degradation. The calculations are based on an {ital a}-Si:H model containing 10% hydrogen, bonded as the monohydride species. A Si-H two- and three-body interatomic potential has also been developed for the simulations.

• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 5238475
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:7; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
AMORPHOUS STATE
ANNEALING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
HYDRIDES
HYDROGEN ADDITIONS
HYDROGEN COMPOUNDS
INTERATOMIC FORCES
INTERSTITIALS
MANY-BODY PROBLEM
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
POINT DEFECTS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
THREE-BODY PROBLEM
TWO-BODY PROBLEM