New microscopic model of the Staebler-Wronski effect in hydrogenated amorphous silicon
- National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)
A new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon (a-Si:H) was recently proposed. Carrier recombination excites H from deep Si-H bonds into a mobile configuration, leaving a threefold-coordinated Si dangling bond (DB) defect at the site of excitation{emdash}a process long suspected to be an element of metastable DB production. Normally, mobile H are recaptured at DB defects and neither metastability nor net DB production results. However, when two mobile H collide, they form a metastable two-hydrogen complex and leave two-spatially-uncorrelated Staebler-Wronski DBs. The model leads to differential equations describing the evolution of the mobile H and DB densities and a variety of new predictions. New directions for improving the stability of a-Si:H are discussed. {copyright} {ital 1999 American Institute of Physics.}
- Research Organization:
- National Renewable Energy Laboratory
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 355363
- Report Number(s):
- CONF-980935--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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