Photoconductivity of thin a-Si:H films

Journal Article · Fri Feb 15 04:00:00 EST 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608020127· OSTI ID:22004929

Koshelev, O G ^[1]; Sazonov, A Yu ^[2]; Khomich, A A ^[1]

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1. Moscow State University (Russian Federation)
2. University of Waterloo, Department of Electrical and Computer Engineering (Canada)

Photoelectric and optical properties of a-Si:H films with a thickness of 60-100 nm were studied. Temperature dependences of photoconductivity in the temperature range 130-440 K and spectral dependences of the absorption coefficient near the absorption edge were measured. The results of comparative measurements of the room-temperature conductivity and the absorption coefficient in the defect-related subgap spectral range (photon energy h{nu} = 1.2 eV) indicate that the recombination of nonequilibrium carriers and, accordingly, the photoconductivity of a-Si:H films with a thickness of {approx}100 nm are determined by the defect concentration in the films.

• OSTI ID: 22004929
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
DEFECTS
FILMS
OPTICAL PROPERTIES
PHOTOCONDUCTIVITY
RECOMBINATION
TEMPERATURE DEPENDENCE
THICKNESS