Surface extended x-ray adsorption fine structure studies of the Si(001) 2 times 1--Sb interface
- Stanford Synchrotron Radiation Laboratory, Stanford, California 94309 (USA)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (USA)
- Stanford Electronics Laboratory, Stanford, California 94305 (USA)
Surface extended x-ray adsorption fine structure (SEXAFS) has been used to investigate the structure of Sb on the Si(001) 2{times}1 surface. The coverage of Sb which remains after annealing thick layers at 375 {degree}C, previously reported to be one monolayer (ML), is found in this work to form a disordered overlayer with three dimensional Sb clusters. This finding is concluded from the Sb {ital L}{sub 3} absorption spectra which are similar for this coverage to that of bulk Sb. After a 550 {degree}C anneal, Auger electron spectroscopy, and scanning tunneling microscopy (STM) show that about 1 ML of Sb remains. Phase and amplitude analysis of the Sb {ital L}{sub 3} edge SEXAFS shows that the remaining Sb atoms occupy a modified bridge site with a Si--Sb bond length of 2.63{plus minus}0.04 A. The Sb atoms form dimers with a Sb--Sb bond length of 2.91{plus minus}0.04 A, which is almost identical to the bulk Sb--Sb bond length of 2.90 A. The Sb atoms lie 1.74{plus minus}0.06 A above the Si(001) surface. STM confirms the dimer structure of the Sb overlayer.
- OSTI ID:
- 5686830
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Vol. 9:3; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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ANTIMONY
MICROSTRUCTURE
ABSORPTION SPECTRA
ANNEALING
AUGER ELECTRON SPECTROSCOPY
ELECTRON DIFFRACTION
FILMS
FINE STRUCTURE
SCANNING ELECTRON MICROSCOPY
SILICON
SURFACES
TUNNEL EFFECT
X-RAY SPECTRA
COHERENT SCATTERING
CRYSTAL STRUCTURE
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ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
HEAT TREATMENTS
METALS
MICROSCOPY
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SEMIMETALS
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360602* - Other Materials- Structure & Phase Studies