Surface extended x-ray adsorption fine structure studies of the Si(001) 2 times 1--Sb interface
- Stanford Synchrotron Radiation Laboratory, Stanford, California 94309 (USA)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (USA)
- Stanford Electronics Laboratory, Stanford, California 94305 (USA)
Surface extended x-ray adsorption fine structure (SEXAFS) has been used to investigate the structure of Sb on the Si(001) 2{times}1 surface. The coverage of Sb which remains after annealing thick layers at 375 {degree}C, previously reported to be one monolayer (ML), is found in this work to form a disordered overlayer with three dimensional Sb clusters. This finding is concluded from the Sb {ital L}{sub 3} absorption spectra which are similar for this coverage to that of bulk Sb. After a 550 {degree}C anneal, Auger electron spectroscopy, and scanning tunneling microscopy (STM) show that about 1 ML of Sb remains. Phase and amplitude analysis of the Sb {ital L}{sub 3} edge SEXAFS shows that the remaining Sb atoms occupy a modified bridge site with a Si--Sb bond length of 2.63{plus minus}0.04 A. The Sb atoms form dimers with a Sb--Sb bond length of 2.91{plus minus}0.04 A, which is almost identical to the bulk Sb--Sb bond length of 2.90 A. The Sb atoms lie 1.74{plus minus}0.06 A above the Si(001) surface. STM confirms the dimer structure of the Sb overlayer.
- OSTI ID:
- 5686830
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN JVTAD; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
ABSORPTION SPECTRA
ANNEALING
ANTIMONY
AUGER ELECTRON SPECTROSCOPY
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
FINE STRUCTURE
HEAT TREATMENTS
METALS
MICROSCOPY
MICROSTRUCTURE
SCANNING ELECTRON MICROSCOPY
SCATTERING
SEMIMETALS
SILICON
SPECTRA
SPECTROSCOPY
SURFACES
TUNNEL EFFECT
X-RAY SPECTRA