Thermal vibration amplitudes and structure of As on Si(001)

Journal Article · Thu Sep 15 04:00:00 EDT 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.7483· OSTI ID:7229051

Franklin, G E ^[1]; Fontes, E ^[2]; Qian, Y; Bedzyk, M J ^[3]; Golovchenko, J A ^[4]; Patel, J R ^[5]

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1. Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States)
2. Cornell High-Energy Synchrotron Source, Ithaca, New York 14853 (United States)
3. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States) Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
4. Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States) Rowland Institute for Science, Cambridge, Massachusetts 02142 (United States)
5. Sektion Physik der Universitat Munchen, Geschwister-Scholl-Platz 1, Munchen 80539 (Germany)

Using the x-ray standing-wave method, we have measured directly the thermal vibration amplitudes [l angle][ital u][sup 2][r angle] of symmetric As dimers on a Si(001)-(2[times]1) surface. For sample temperatures in the range 300 K [le][ital T][le]650 K, the results are Debye-like. Above 650 K [l angle][ital u][sup 2][r angle] varies more rapidly, indicating the onset of defect-mediated processes. We also found that at room temperature the bond length of the As dimers is 2.58[plus minus]0.04 A and that, independent of temperature, they sit 1.40[plus minus]0.01 A above the top bulk-extrapolated silicon (004) plane. These results provide a critical test for theoretical structure calculations.

• DOE Contract Number: W-31109-ENG-38; FG02-89ER45399; AC02-76CH00016
• OSTI ID: 7229051
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:11; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ARSENIC
BOND LENGTHS
DIMENSIONS
DIMERS
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY LEVELS
EXCITED STATES
LENGTH
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
VIBRATIONAL STATES