Local bonding structure of Sb on Si(111) by surface extended x-ray-absorption fine structure and photoemission
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (USA)
- Stanford Electronics Laboratory, Stanford, California 94305 (USA)
The combined techniques of surface extended x-ray-absorption fine structure (SEXAFS) and high-resolution core and valence photoelectron spectroscopy have been used to study the local bonding structure of the Sb/Si(111) interface. From photoemission, we find that the Sb atoms adsorb in a unique environment that completely saturates the dangling bonds of the Si(111) surface and that completely eliminates the surface components of the Si 2{ital p} core-level spectrum. The Sb-induced Si 2{ital p} interfacial core level is found to be shifted 0.20{plus minus}0.02 eV towards higher binding energy with an intensity that corresponds to the top monolayer of surface atoms. The SEXAFS determination of the absolute surface coordination numbers and bond lengths within the first Sb shell is 2.1{plus minus}0.3 Sb atoms at 2.86{plus minus}0.02 A and 2.0{plus minus}0.4 Si atoms at 2.66{plus minus}0.03 A. Combined, these results indicate that Sb trimers occupy the threefold atop sites of the Si(111) surface, where each Sb atom is bonded to two Si atoms in a modified bridge configuration.
- OSTI ID:
- 5636586
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:5; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ABSORPTION
ABSORPTION SPECTRA
ANTIMONY
COHERENT SCATTERING
CRYSTAL FACES
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
ELEMENTS
INTERFACES
METALS
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SORPTIVE PROPERTIES
SPECTRA
SURFACE PROPERTIES
X-RAY SPECTRA