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Title: The Si(100)-Sb 2{times}1 and Ge(100) 2{times}1 surfaces: A multi-technique study

Abstract

The electronic and geometric structures of the clean and Sb terminated Si(100)2{times}1 and Ge(100)-2{times}1 surfaces have been investigated using a multi-technique approach. Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), surface extended X-ray absorption fine structure (SEXAFS) spectroscopy and angle-integrated core-level photoemission electron spectroscopy (PES) were employed to measure the surface symmetry, defect structure, relevant bond lengths, atomic coordination and electronic structure. By employing a multi-technique approach, it is possible to correlate changes in the geometric structure to specific features of the core-level lineshape of the substrate. This allows for the assignment of components of the core-level lineshape to be assigned to specific surface and near-surface atoms.

Authors:
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
105652
Report Number(s):
SLAC-423; SLAC/SSRL-0057
ON: DE95016467; TRN: 95:020401
DOE Contract Number:  
AC03-76SF00515
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Aug 1993
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; 36 MATERIALS SCIENCE; SILICON ALLOYS; ELECTRONIC STRUCTURE; SURFACE PROPERTIES; SEMICONDUCTOR MATERIALS; GERMANIUM ALLOYS; ANTIMONY ALLOYS; X-RAY SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELECTRON DIFFRACTION; INTERFACES; CRYSTAL DEFECTS; CHEMICAL BONDS

Citation Formats

Richter, M. The Si(100)-Sb 2{times}1 and Ge(100) 2{times}1 surfaces: A multi-technique study. United States: N. p., 1993. Web. doi:10.2172/105652.
Richter, M. The Si(100)-Sb 2{times}1 and Ge(100) 2{times}1 surfaces: A multi-technique study. United States. https://doi.org/10.2172/105652
Richter, M. 1993. "The Si(100)-Sb 2{times}1 and Ge(100) 2{times}1 surfaces: A multi-technique study". United States. https://doi.org/10.2172/105652. https://www.osti.gov/servlets/purl/105652.
@article{osti_105652,
title = {The Si(100)-Sb 2{times}1 and Ge(100) 2{times}1 surfaces: A multi-technique study},
author = {Richter, M},
abstractNote = {The electronic and geometric structures of the clean and Sb terminated Si(100)2{times}1 and Ge(100)-2{times}1 surfaces have been investigated using a multi-technique approach. Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), surface extended X-ray absorption fine structure (SEXAFS) spectroscopy and angle-integrated core-level photoemission electron spectroscopy (PES) were employed to measure the surface symmetry, defect structure, relevant bond lengths, atomic coordination and electronic structure. By employing a multi-technique approach, it is possible to correlate changes in the geometric structure to specific features of the core-level lineshape of the substrate. This allows for the assignment of components of the core-level lineshape to be assigned to specific surface and near-surface atoms.},
doi = {10.2172/105652},
url = {https://www.osti.gov/biblio/105652}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Aug 01 00:00:00 EDT 1993},
month = {Sun Aug 01 00:00:00 EDT 1993}
}