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The Si(100)-Sb 2x1 and Ge(100)-Sb on 2x1 Surfaces: A Multi-Technique Study (Thesis)

Technical Report ·
DOI:https://doi.org/10.2172/1454102· OSTI ID:1454102
 [1]
  1. SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL); Stanford Univ., CA (United States)
The electronic and geometric structures of the clean and Sb terminated Si(100)- 2x1 and Ge(100)-2x1 surfaces have been investigated using a multi-technique approach. Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), surface extended X-ray absorption fine structure (SEXAFS) spectroscopy and angle-integrated core-level photoemission electron spectroscopy (PES) were employed to measure the surface symmetry, defect structure, relevant bond lengths, atomic coordination and electronic structure. By employing a multi-technique approach, it is possible to correlate changes in the geometric structure to specific features of the core-level lineshape of the substrate. This allows for the assignment of components of the core-level lineshape to be assigned to specific surface and near-surface atoms.
Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
AC02-76SF00515
OSTI ID:
1454102
Report Number(s):
SLAC-R-423; SLAC/SSRL; 0057 UC-410
Country of Publication:
United States
Language:
English

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