Passivation of Si(100)2x1 surfaces with elemental sulfur
Book
·
OSTI ID:470936
- Clark Atlanta Univ., GA (United States)
Silicon and other semiconductors (GaAs, InP) are widely used in high-speed electronics, long-wavelength optical circuits (optoelectronics) and, mainly in space technology, as solar cells (photovoltaics). Deposition of elemental S on Si(100)2x1 surfaces at room temperature changes the reconstructed Si(100)2x1 to its original bulk-terminated Si(100)1x1 surface. Sulfur forms initially a (2x1) on the Si(100)2x1 surface and subsequently a (1x1) on the Si(100)1x1. Above 1 ML, sulfur is diffused into the Si bulk near the surface. The sticking coefficient of S on Si(100) surface is constant up to 2 ML. Deposition of S at RT up to 1 ML increases the work function of the surface by about .3 {+-} 0.05 eV. Above 1 ML, as the S is diffused into the Si bulk, the work function decreases.
- Sponsoring Organization:
- National Aeronautics and Space Administration, Washington, DC (United States)
- OSTI ID:
- 470936
- Report Number(s):
- CONF-951155--; ISBN 1-55899-313-4
- Country of Publication:
- United States
- Language:
- English
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