Effects of reliability screens of MOS charge trapping

Conference · Fri Sep 01 04:00:00 EDT 1995

OSTI ID:105061

Shanneyfelt, M R; Winokur, P S; Fleetwood, D M; Schwank, J R; Reber, Jr, R A

The effects of pre-irradiation elevated-temperature bias stresses on the radiation hardness of field-oxide transistors have been investigated as a function of stress temperature, time, and bias. Both the stress temperature and time are found to have a significant impact on radiation-induced charge buildup in these transistors. Specifically, an increase in either the stress temperature or time causes a much larger negative shift (towards depletion) in the I-V characteristics of the n-channel field-oxide transistors. This increased shift in the transistor I-V characteristics with stress temperature and time suggests that the mechanisms responsible for the stress effects are thermally activated. An activation energy of {approximately}0.38 eV was measured. The stress bias was found to have no impact on radiation-induced charge buildup in these transistors. The observed stress temperature, time, and bias dependencies appears to be consistent with the diffusion of molecular hydrogen during a given stress period. These results have important implications for the development of hardness assurance test methods.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 105061
• Report Number(s): SAND--95-0514C; CONF-9509107--1; ON: DE95017838
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
36 MATERIALS SCIENCE
42 ENGINEERING
ELECTRICAL TESTING
INTEGRATED CIRCUITS
LEAKAGE CURRENT
MOS TRANSISTORS
QUALITY ASSURANCE
RADIATION HARDENING
SILICON OXIDES