Effects of reliability screens on MOS charge trapping
- Sandia National Labs., Albuquerque, NM (United States)
The effects of pre-irradiation elevated-temperature bias stresses on the radiation hardness of field-oxide transistors have been investigated as a function of stress temperature, time, and bias. Both the stress temperature and time are found to have a significant impact on radiation-induced charge buildup in these transistors. Specifically, an increase in either the stress temperature or time causes a much larger negative shift (towards depletion) in the I-V characteristics of the n-channel field-oxide transistors. This increased shift in the transistor I-V characteristics with stress temperature and time suggests that the mechanisms responsible for the stress effects are thermally activated. An activation energy of {approximately}0.38 eV was measured. The stress bias was found to have no impact on radiation-induced charge buildup in these transistors. The observed stress temperature, time, and bias dependencies appears to be consistent with the diffusion of molecular hydrogen during a given stress period. These results have important implications for the development of hardness assurance test methods.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 277724
- Report Number(s):
- CONF-9509107--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devices
Effect of oxide thickness on interface-trap buildup rates