Effect of oxide thickness on interface-trap buildup rates

Conference · Tue Sep 01 04:00:00 EDT 1992

OSTI ID:10180642

Shaneyfelt, M R; Schwank, J R; Fleetwood, D M; Winokur, P S

The time dependence of radiation-induced interface-trap charge buildup for MOS transistors of varying gate-oxide thickness was investigated in order to clarify how the location of hydrogen in the SiO{sub 2} contributes to N{sub it} buildup. Radiation-induced interface-trap buildup in wet and dry gate oxides is compared for irradiations and anneals at constant positive bias and for negative-bias irradiations followed by positive-bias anneals. Implications of these results for different models of interface-trap buildup are discussed. 2 figs, 9 refs. (DLC)

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10180642
• Report Number(s): SAND--92-1920C; CONF-921226--1; ON: DE92040981
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000
440200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
ELECTRIC CHARGES
HOLES
HYDROGEN IONS
INTERFACES
MOISTURE
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
SILICON OXIDES
THICKNESS
TRAPS