Effect of oxide thickness on interface-trap buildup rates

Conference · Tue Dec 31 23:00:00 EST 1991

OSTI ID:7161009

Shaneyfelt, M R; Schwank, J R; Fleetwood, D M; Winokur, P S

The time dependence of radiation-induced interface-trap charge buildup for MOS transistors of varying gate-oxide thickness was investigated in order to clarify how the location of hydrogen in the SiO{sub 2} contributes to N{sub it} buildup. Radiation-induced interface-trap buildup in wet and dry gate oxides is compared for irradiations and anneals at constant positive bias and for negative-bias irradiations followed by positive-bias anneals. Implications of these results for different models of interface-trap buildup are discussed. 2 figs, 9 refs. (DLC)

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7161009
• Report Number(s): SAND-92-1920C; CONF-921226--1; ON: DE92040981
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHALCOGENIDES
CHARGED PARTICLES
DIMENSIONS
ELECTRIC CHARGES
HEAT TREATMENTS
HOLES
HYDROGEN IONS
INTERFACES
IONS
MOISTURE
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
THICKNESS
TRANSISTORS
TRAPS