Second Generation Monolithic Full-depletion Radiation Sensor with Integrated CMOS Circuitry
Conference
·
OSTI ID:1014125
A second-generation monolithic silicon radiation sensor has been built and characterized. This pixel detector has CMOS circuitry fabricated directly in the high-resistivity floatzone substrate. The bulk is fully depleted from bias applied to the backside diode. Within the array, PMOS pixel circuitry forms the first stage amplifiers. Full CMOS circuitry implementing further amplification as well as column and row logic is located in the periphery of the pixel array. This allows a sparse-field readout scheme where only pixels with signals above a certain threshold are readout. We describe the fabrication process, circuit design, system performance, and results of gamma-ray radiation tests.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 1014125
- Report Number(s):
- SLAC-PUB-14318; TRN: US1102624
- Resource Relation:
- Conference: Presented at 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, and 17th Room Temperature Semiconductor Detectors Workshop, Knoxville, Tennessee, 30 Oct - 6 Nov 2010
- Country of Publication:
- United States
- Language:
- English
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