Fully Depleted CMOS Active Pixel Sensor on High Resistivity Silicon for Tracking of Minimum Ionizing Particles in High Energy Physics Experiments
- Sensor Creations, Inc., Camarillo, CA (United States)
Sensor Creations, Inc. (SCI) has developed a high-speed, low-power, 1024 x 1024 CMOS monolithic active pixel sensor (MAPS) for particle tracking in high-energy physics (HEP) applications. SCI’s sensor is a fully depleted, backside-illuminated sensor fabricated in high-resistivity silicon with a unique CMOS sensor process that makes it possible to integrate complementary circuitry, for example digital circuitry, inside the pixel array. With smaller pixels compared with other MAPS used in the HEP community, SCI’s sensor enables a higher position resolution. To keep the data rate at a manageable level, data are reduced early on in the readout chain through end-of-column discrimination and programmable on-chip sparsification logic, using a data reduction scheme known as the “OrthoPix” concept which is particularly well suited for large area particle tracking at high frame rates with minimum power dissipation using small pixels. SCI’s sensor is designed to achieve a reconstruction efficiency of 99.9% at 340 MHz/cm2 hit rate (equivalent to ~29 hits per frame) at 50 MHz frame rate. Fabrication is performed by conventional silicon foundries and sensors can be manufactured in large format limited only by the size of the silicon wafer substrate. The CMOS process is inherently radiation hard, and SCI’s sensor is expected to maintain full functionality even after accumulating very high neutron irradiation dosages of >1016 cm2. This report provides an overview of the OrthoPix concept and a detailed description of SCI’s sensor with OrthoPix architecture implementation. We will describe in detail our sensor design and layout, backside processing, packaging, test environment development, and test results obtained for both our pathfinder device and the OrthoPix device.
- Research Organization:
- Sensor Creations, Inc., Camarillo, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Contributing Organization:
- Sensor Creations, Inc.
- DOE Contract Number:
- SC0013683
- OSTI ID:
- 1479199
- Type / Phase:
- SBIR (Phase II)
- Report Number(s):
- DOE-SCI-13683; 8054840444
- Country of Publication:
- United States
- Language:
- English
Similar Records
Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II
Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes