Radiation Hard Pixel Tracking Sensor for High Luminosity Colliders (Final Scientific/Technical Report)

Lauxtermann, Stefan Clemens

Title: Radiation Hard Pixel Tracking Sensor for High Luminosity Colliders (Final Scientific/Technical Report)

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Abstract

For this project Sensor Creations, Inc. (SCI) started to develop a radiation hard monolithic active pixel sensor (MAPS) for MIPS tracking in high luminosity Nuclear Physics particle detectors. The performance is estimated to nearly match that of state-of-the-art hybrid sensors. The device will be able to support very high hit rates of 800 MHz/cm2. These devices are suited to cover very large areas very close to the vertex and meet most stringent power and cost constraints. Similar devices have been demonstrated to survive radiation exposure to >1 Grad and a TID (Total Integrated Dose) >2x1016 neq/cm2 1 MeV neutron equivalent. Although previous generation hybrid pixel detector arrays provide excellent tracking information, their fabrication cost, the comparatively large amount of material from CMOS IC plus detector in the path of a minimum ionizing particle (MIP) plus their high-power dissipation could be significantly improved upon with new technology. Except for the innermost tracking layer an improvement for implementation in the next generation of HEP experiments is required. Sensor Creations, Inc. (SCI) has developed a MAPS technology based on an industrial CMOS process using high resistivity silicon, i.e. ρSi > 6.5 kΩ x cm. Finished 8’’ CMOS wafers are thinned to 50-400 m,more »« less

Authors:

Lauxtermann, Stefan Clemens ^[1]

Sensor Creations, Inc., Camarillo, CA (United States)

Publication Date:: 2019-12-10

Research Org.:: Sensor Creations, Inc., Camarillo, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1579367

Report Number(s):: DE-SC001956

DOE Contract Number:: SC0019567

Type / Phase:: SBIR (Phase I)

Resource Type:: Technical Report

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; high speed radiation detector; high speed monolithic CMOS; radiation hard active pixel sensor

Citation Formats


                    Lauxtermann, Stefan Clemens. Radiation Hard Pixel Tracking Sensor for High Luminosity Colliders (Final Scientific/Technical Report).  United States: N. p., 2019. 
        Web.

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                    Lauxtermann, Stefan Clemens. Radiation Hard Pixel Tracking Sensor for High Luminosity Colliders (Final Scientific/Technical Report).  United States.

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                    Lauxtermann, Stefan Clemens. 2019.  
        "Radiation Hard Pixel Tracking Sensor for High Luminosity Colliders (Final Scientific/Technical Report)".  United States.

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@article{osti_1579367,

  title        = {Radiation Hard Pixel Tracking Sensor for High Luminosity Colliders (Final Scientific/Technical Report)},

  author       = {Lauxtermann, Stefan Clemens},

  abstractNote = {For this project Sensor Creations, Inc. (SCI) started to develop a radiation hard monolithic active pixel sensor (MAPS) for MIPS tracking in high luminosity Nuclear Physics particle detectors. The performance is estimated to nearly match that of state-of-the-art hybrid sensors. The device will be able to support very high hit rates of 800 MHz/cm2. These devices are suited to cover very large areas very close to the vertex and meet most stringent power and cost constraints. Similar devices have been demonstrated to survive radiation exposure to >1 Grad and a TID (Total Integrated Dose) >2x1016 neq/cm2 1 MeV neutron equivalent. Although previous generation hybrid pixel detector arrays provide excellent tracking information, their fabrication cost, the comparatively large amount of material from CMOS IC plus detector in the path of a minimum ionizing particle (MIP) plus their high-power dissipation could be significantly improved upon with new technology. Except for the innermost tracking layer an improvement for implementation in the next generation of HEP experiments is required. Sensor Creations, Inc. (SCI) has developed a MAPS technology based on an industrial CMOS process using high resistivity silicon, i.e. ρSi > 6.5 kΩ x cm. Finished 8’’ CMOS wafers are thinned to 50-400 m, and a backside electrode is added to form a vertical PIN photodiode which deliver high speed, low noise performance without a gain enhancing pixel level amplifier. Furthermore, SCI has designed, fabricated and packaged a particle tracking chip based on an “Orthopix” architecture. Summary for Members of Congress: A high speed radiation detector is developed leveraging commercial IC fabrication technology. The device can survive highest radiation dosages and is suited for implementation in high volume, low cost applications where scientific imaging performance is required at consumer price levels for radiation detection outside the visible spectrum.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1579367},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {12}

}

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