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Title: Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Abstract

Pixel sensors built on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 10 15 n eq/cm 2 and detection efficiencies above 99.5%. Currently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.

Authors:
 [1];  [1];  [1];  [2];  [3];  [3];  [1];  [4];  [1];  [5];  [1];  [1];  [3];  [6];  [7];  [8];  [7];  [4];  [4];  [4] more »;  [1];  [1];  [9];  [7];  [4];  [1];  [3];  [1];  [4];  [10] « less
  1. Univ. of Geneva (Switzerland)
  2. Inst. for High Energy Physics (IFAE), Barcelona (Spain)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Karlsruhe Inst. of Technology (KIT) (Germany)
  5. Univ. of Oklahoma, Norman, OK (United States)
  6. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Hefei (China)
  7. Univ. of Bern (Switzerland)
  8. Argonne National Lab. (ANL), Lemont, IL (United States)
  9. Univ. of Liverpool (United Kingdom)
  10. Univ. of Illinois, Urbana-Champaign, IL (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25); Swiss National Science Foundation (SNSF)
OSTI Identifier:
1526684
Report Number(s):
BNL-211728-2019-JAAM
Journal ID: ISSN 0168-9002
Grant/Contract Number:  
SC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 924; Journal Issue: C; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; ATLAS ITk upgrade; High luminosity LHC; Silicon pixel sensor; Monolithic active pixel sensor; CMOS; HV-MAPS

Citation Formats

Kiehn, Moritz, Di Bello, Francesco Armando, Benoit, Mathieu, Casanova Mohr, Raimon, Chen, Hucheng, Chen, Kai, D.M.S., Sultan, Ehrler, Felix, Ferrere, Didier, Frizell, Dylan, Gonzalez Sevilla, Sergio, Iacobucci, Giuseppe, Lanni, Francesco, Liu, Hongbin, Merlassino, Claudia, Metcalfe, Jessica, Miucci, Antonio, Peric, Ivan, Prathapan, Mridula, Schimassek, Rudolf, Vicente Barreto, Mateus, Weston, Thomas, Vilella Figueras, Eva, Weber, Michele, Weber, Alena, Wong, Winnie, Wu, Weihao, Zaffaroni, Ettore, Zhang, Hui, and Zhang, Matt. Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade. United States: N. p., 2018. Web. doi:10.1016/j.nima.2018.07.061.
Kiehn, Moritz, Di Bello, Francesco Armando, Benoit, Mathieu, Casanova Mohr, Raimon, Chen, Hucheng, Chen, Kai, D.M.S., Sultan, Ehrler, Felix, Ferrere, Didier, Frizell, Dylan, Gonzalez Sevilla, Sergio, Iacobucci, Giuseppe, Lanni, Francesco, Liu, Hongbin, Merlassino, Claudia, Metcalfe, Jessica, Miucci, Antonio, Peric, Ivan, Prathapan, Mridula, Schimassek, Rudolf, Vicente Barreto, Mateus, Weston, Thomas, Vilella Figueras, Eva, Weber, Michele, Weber, Alena, Wong, Winnie, Wu, Weihao, Zaffaroni, Ettore, Zhang, Hui, & Zhang, Matt. Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade. United States. doi:10.1016/j.nima.2018.07.061.
Kiehn, Moritz, Di Bello, Francesco Armando, Benoit, Mathieu, Casanova Mohr, Raimon, Chen, Hucheng, Chen, Kai, D.M.S., Sultan, Ehrler, Felix, Ferrere, Didier, Frizell, Dylan, Gonzalez Sevilla, Sergio, Iacobucci, Giuseppe, Lanni, Francesco, Liu, Hongbin, Merlassino, Claudia, Metcalfe, Jessica, Miucci, Antonio, Peric, Ivan, Prathapan, Mridula, Schimassek, Rudolf, Vicente Barreto, Mateus, Weston, Thomas, Vilella Figueras, Eva, Weber, Michele, Weber, Alena, Wong, Winnie, Wu, Weihao, Zaffaroni, Ettore, Zhang, Hui, and Zhang, Matt. Sat . "Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade". United States. doi:10.1016/j.nima.2018.07.061. https://www.osti.gov/servlets/purl/1526684.
@article{osti_1526684,
title = {Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade},
author = {Kiehn, Moritz and Di Bello, Francesco Armando and Benoit, Mathieu and Casanova Mohr, Raimon and Chen, Hucheng and Chen, Kai and D.M.S., Sultan and Ehrler, Felix and Ferrere, Didier and Frizell, Dylan and Gonzalez Sevilla, Sergio and Iacobucci, Giuseppe and Lanni, Francesco and Liu, Hongbin and Merlassino, Claudia and Metcalfe, Jessica and Miucci, Antonio and Peric, Ivan and Prathapan, Mridula and Schimassek, Rudolf and Vicente Barreto, Mateus and Weston, Thomas and Vilella Figueras, Eva and Weber, Michele and Weber, Alena and Wong, Winnie and Wu, Weihao and Zaffaroni, Ettore and Zhang, Hui and Zhang, Matt},
abstractNote = {Pixel sensors built on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 1015 neq/cm2 and detection efficiencies above 99.5%. Currently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.},
doi = {10.1016/j.nima.2018.07.061},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
issn = {0168-9002},
number = C,
volume = 924,
place = {United States},
year = {2018},
month = {7}
}

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