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Title: Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
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  1. Univ. of Geneva (Switzerland)
  2. Inst. for High Energy Physics (IFAE), Barcelona (Spain)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Karlsruhe Inst. of Technology (KIT) (Germany)
  5. Univ. of Oklahoma, Norman, OK (United States)
  6. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Hefei (China)
  7. Univ. of Bern (Switzerland)
  8. Argonne National Lab. (ANL), Lemont, IL (United States)
  9. Univ. of Liverpool (United Kingdom)
  10. Univ. of Illinois, Urbana-Champaign, IL (United States)
+ Show Author Affiliations

Pixel sensors built on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 1015 neq/cm2 and detection efficiencies above 99.5%. Currently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP); Swiss National Science Foundation (SNSF)
Grant/Contract Number:
SC0012704
OSTI ID:
1526684
Report Number(s):
BNL-211728-2019-JAAM
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 924, Issue C; ISSN 0168-9002
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

References (7)

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes journal February 2018
The MuPix high voltage monolithic active pixel sensor for the Mu3e experiment journal March 2015
The MuPix system-on-chip for the Mu3e experiment
  • Augustin, Heiko; Berger, Niklaus; Dittmeier, Sebastian
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 845 https://doi.org/10.1016/j.nima.2016.06.095
journal February 2017
Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade journal January 2016
Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade journal January 2017
Characterisation of novel prototypes of monolithic HV-CMOS pixel detectors for high energy physics experiments journal June 2017
The FE-I4 telescope for particle tracking in testbeam experiments journal July 2016

Figures / Tables (7)

Figure 1(p. 4)figure Figure 1
Figure 2(p. 4)figure Figure 2
Figure 3(p. 5)figure Figure 3
Figure 4(p. 5)figure Figure 4
Figure 5(p. 6)figure Figure 5
Figure 6(p. 7)figure Figure 6
Figure 7(p. 7)figure Figure 7

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Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
ATLAS ITk upgrade
High luminosity LHC
Silicon pixel sensor
Monolithic active pixel sensor
CMOS
HV-MAPS