Second Generation Monolithic Full-depletion Radiation Sensor with Integrated CMOS Circuitry

Conference · Fri May 20 00:00:00 EDT 2011

OSTI ID:1014125

Segal, J D; Kenney, C J; Parker, S I; Aw, C H; Snoeys, W J; Wooley, B; Plummer, J D

A second-generation monolithic silicon radiation sensor has been built and characterized. This pixel detector has CMOS circuitry fabricated directly in the high-resistivity floatzone substrate. The bulk is fully depleted from bias applied to the backside diode. Within the array, PMOS pixel circuitry forms the first stage amplifiers. Full CMOS circuitry implementing further amplification as well as column and row logic is located in the periphery of the pixel array. This allows a sparse-field readout scheme where only pixels with signals above a certain threshold are readout. We describe the fabrication process, circuit design, system performance, and results of gamma-ray radiation tests.

• Research Organization: SLAC National Accelerator Lab., Menlo Park, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 1014125
• Report Number(s): SLAC-PUB-14318; TRN: US1102624
• Resource Relation: Conference: Presented at 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, and 17th Room Temperature Semiconductor Detectors Workshop, Knoxville, Tennessee, 30 Oct - 6 Nov 2010
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DESIGN
SI SEMICONDUCTOR DETECTORS
TRANSISTORS
READOUT SYSTEMS
FABRICATION
PERFORMANCE
GAMMA DETECTION
TESTING
Instrumentation
INST