Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

Conference · Sat Oct 01 04:00:00 EDT 1994

OSTI ID:10117945

Perez-Mendez, V; Drewery, J; Hong, W S; Jing, T; Kaplan, S N; Lee, H; Mireshghi, A

We describe the characteristics of thin (1 {mu}m) and thick (>30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10117945
• Report Number(s): LBL--36025; CONF-941063--12; ON: DE95006568
• Country of Publication: United States
• Language: English

Related Subjects

440100
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
663620
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
CHARGED PARTICLE DETECTION
DESIGN
PHYSICS OF RADIATIONS OTHER THAN NEUTRONS
RADIATION DETECTORS
RADIATION INSTRUMENTATION
SI SEMICONDUCTOR DETECTORS
TECHNOLOGY ASSESSMENT
THIN FILMS
TRANSISTORS