Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

Conference · Sat Oct 01 00:00:00 EDT 1994

OSTI ID:10117945

Perez-Mendez, V; Drewery, J; Hong, W S; Jing, T; Kaplan, S N; Lee, H; Mireshghi, A

We describe the characteristics of thin (1 {mu}m) and thick (>30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10117945
• Report Number(s): LBL-36025; CONF-941063-12; ON: DE95006568; TRN: 95:002522
• Resource Relation: Conference: 186. meeting of the Electrochemical Society,Miami, FL (United States),9-14 Oct 1994; Other Information: PBD: Oct 1994
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
RADIATION DETECTORS
DESIGN
CHARGED PARTICLE DETECTION
TECHNOLOGY ASSESSMENT
SI SEMICONDUCTOR DETECTORS
THIN FILMS
TRANSISTORS
440100
663620
RADIATION INSTRUMENTATION
PHYSICS OF RADIATIONS OTHER THAN NEUTRONS