Signal readout in a-Si:H pixel detectors

Conference · Sun Aug 01 04:00:00 EDT 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5859032

Cho, Gyuseong; Drewery, J S; Hong, W S; Jing, T; Kaplan, S N; Lee, H; Mireshghi, A; Perez-Mendez, V; Wildermuth, D ^[1]

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1. Lawrence Berkeley Lab., CA (United States)

Amorphous- or polysilicon thin-film technology can be used to make readout electronics for large-area a-Si:H pixel detectors. A switch consisting of two a-Si:H p-i-n diodes was studied to readout signals from pixels for the imaging of X-ray or gamma ray distributions. A charge storage time of 20 msec and a readout time of 0.7 [mu]sec were achieved. For the detection of single ionizing particles, polysilicon thin-film-transistor amplifiers can be integrated to amplify the small signals at the pixel level before readout. Prototype polysilicon TFT amplifiers were designed and fabricated. The measured gain-bandwidth product was [approximately] 300 MHz and the input equivalent noise charge was [approximately] 1,000 electrons for a 1[mu]sec shaping time.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5859032
• Report Number(s): CONF-921005--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:4 part 1
• Country of Publication: United States
• Language: English

Related Subjects

440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFICATION
AMPLIFIERS
DESIGN
DETECTION
ELECTRONIC EQUIPMENT
EQUIPMENT
FILMS
GAMMA DETECTION
MEASURING INSTRUMENTS
RADIATION DETECTION
RADIATION DETECTORS
READOUT SYSTEMS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SI SEMICONDUCTOR DETECTORS
SIGNALS
THIN FILMS
TRANSISTOR AMPLIFIERS
X-RAY DETECTION