Charge-sensitive poly-silicon TFT amplifiers for a-Si:H pixel particle detectors

Conference · Tue Mar 31 23:00:00 EST 1992

OSTI ID:10161316

Cho, G; Perez-Mendez, V ^[1]; Hack, M; Lewis, A ^[2]

---

1. Lawrence Berkeley Lab., CA (United States)
2. Xerox Palo Alto Research Center, CA (United States)

Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is {approximately} 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of {approximately} 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is {approximately} 1000 electrons for a shaping time of 1 {mu}sec.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10161316
• Report Number(s): LBL--32219; CONF-920402--41; ON: DE92016915
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000
440100
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
DESIGN
FABRICATION
FREQUENCY DEPENDENCE
RADIATION DETECTORS
RADIATION INSTRUMENTATION
SILICON DIODES
THIN FILMS
TRANSISTOR AMPLIFIERS