Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

Conference · Wed Jul 01 04:00:00 EDT 1992

OSTI ID:10177861

Perez-Mendez, V; Cho, G; Drewery, J; Jing, T; Kaplan, S N; Mireshghi, A; Wildermuth, D ^[1]; Goodman, C ^[2]; Fujieda, I ^[3]

---

1. Lawrence Berkeley Lab., CA (United States)
2. Air Techniques Corp., Hicksville, New York (United States)
3. NEC Corp., Tokyo (Japan)

We describe the characteristics of thin (1 {mu}m) and thick (> 30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, {gamma} rays and thermal neutrons. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2{approximately}5 {mu}m) gadolinium converters on 30 {mu}m thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10177861
• Report Number(s): LBL--32460; CONF-9206222--2; ON: DE92040379
• Country of Publication: United States
• Language: English

Related Subjects

440101
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DESIGN
ELECTRONIC CIRCUITS
GENERAL DETECTORS OR MONITORS AND RADIOMETRIC INSTRUMENTS
RADIATION DETECTION
SEMICONDUCTOR DIODES
SI SEMICONDUCTOR DETECTORS
THIN FILMS
TRANSISTORS