Amorphous silicon based radiation detectors

Conference · Mon Jul 01 04:00:00 EDT 1991

OSTI ID:5472300

Perez-Mendez, V; Cho, G; Drewery, J; Jing, T; Kaplan, S N; Qureshi, S; Wildermuth, D ^[1]; Fujieda, I; Street, R A ^[2]

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1. Lawrence Berkeley Lab., CA (United States)
2. Xerox Palo Alto Research Center, CA (United States)

We describe the characteristics of thin(1 {mu}m) and thick (>30{mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5472300
• Report Number(s): LBL-30940; CONF-9108122--1; ON: DE91016417
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMORPHOUS STATE
CHARGED PARTICLE DETECTION
DETECTION
FILMS
GAMMA DETECTION
MEASURING INSTRUMENTS
PERFORMANCE TESTING
PHOTODIODES
PHYSICAL RADIATION EFFECTS
RADIATION DETECTION
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SI SEMICONDUCTOR DETECTORS
SILICON DIODES
TESTING
THIN FILMS
X-RAY DETECTION