Ion implantation of diamond: Damage, doping, and lift-off

Conference · Wed Sep 01 00:00:00 EDT 1993

OSTI ID:10103623

Parikh, N R; McGucken, E; Swanson, M L ^[1]; Hunn, J D; White, C W; Zuhr, R A ^[2]

---

1. North Carolina Univ., Chapel Hill, NC (United States). Dept. of Physics and Astronomy
2. Oak Ridge National Lab., TN (United States)

In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxial films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 10103623
• Report Number(s): CONF-9308122-12; ON: DE94001133; CNN: Contract N00014-92-C-0081
• Resource Relation: Conference: International Union of Materials Research Societies on advanced materials,Tokyo (Japan),31 Aug - 4 Sep 1993; Other Information: PBD: Sep 1993
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPES AND RADIATION SOURCES
36 MATERIALS SCIENCE
DIAMONDS
ION IMPLANTATION
DAMAGE
FILMS
CARBON IONS
OXYGEN IONS
MONOCRYSTALS
ETCHING
REMOVAL
P-TYPE CONDUCTORS
N-TYPE CONDUCTORS
BORON IONS
SODIUM IONS
PHOSPHORUS IONS
ARSENIC IONS
070205
360605
INDUSTRIAL APPLICATIONS
RADIATION PROCESSING
RADIATION EFFECTS