Ion implantation doping of diamond
The introduction by ion implantation of electrical dopants into single crystal diamond for the formation of an extrinsic semiconductor has been studied. RBS/channeling and optical absorption have been used to study the radiation damage produced by implantation of carbon ions into single crystal diamond. Damage recovery by thermal annealing has been measured as a function of dose, anneal temperature, and anneal rate. Three dose dependent effects have been observed in the annealed samples. At low dose, recovery of the crystal structure was possible when annealed above 900[degrees]C. At high dose, sufficient amorphization caused a conversion to graphite upon annealing at high temperature. In a medium dose range, a thermally stable damage region was formed at 800[degrees]C which showed no channeling but did not convert to graphite. The results of the annealing studies were applied to minimize the damage accompanying the implantation of boron (p-type), sodium (n-type), and other dopants into single crystal diamond. Implantation of boron successfully reproduced the semiconducting behavior observed in natural, boron doped, semiconducting diamond. A single electrical activation energy of 0.32 eV has been measured over a broader temperature range than previously observed. N-type doping with suitable species has also been attempted. Exponentially activated conduction has been observed but thermal instability points to a damage related mechanism.
- Research Organization:
- North Carolina Univ., Chapel Hill, NC (United States)
- OSTI ID:
- 7165656
- Resource Relation:
- Other Information: Thesis (Ph.D.)
- Country of Publication:
- United States
- Language:
- English
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