Conduction in ion implanted single crystal diamond
- North Carolina Univ., Chapel Hill, NC (United States). Dept. of Physics and Astronomy
- Oak Ridge National Lab., TN (United States)
We have implanted sodium, phosphorus and arsenic into single crystal type IIa diamond as possible n-type dopants. Particular emphasis was applied to the implantation of sodium at different temperatures and doses; combined implantation energies of 55,80 and 120 keV were used to provide a uniformly doped layer over approximately 100 nm depth. The implanted layers exhibited semiconducting behavior with a single exponential activation energy between 0.40 and 0.48 eV, as determined by temperature dependent resistance measurements. A sample implanted to a concentration of 5.10{sup 19} Na{sup +}/cm{sup 3} at 550{degrees}C exhibited a single activation energy of 0.415 eV over a temperature range from 25 to 500{degrees}C. Thermal annealing above 900{degrees}C was found to remove implantation damage as measured by optical absorption and RBS/channeling. However, concomitant increases in the resistance and the activation energy were observed. Implantation of {sup 22}Ne was used to introduce a damage density equivalent to the {sup 23}Na implant, while not introducing an electrically active species. The activation energy and electrical resistance were similar but higher than those produced by implantation with sodium. We conclude that the electrical properties of the Na-implanted samples were at least partly due to electrically active Na, but that residual implantation damage was still important.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- DOE; DOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 7164347
- Report Number(s):
- CONF-920854-1; ON: DE92040861; CNN: N00014-87-K-0243
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ACTIVATION ENERGY
ANNEALING
ARSENIC IONS
CARBON
CHARGED PARTICLES
CRYSTAL DOPING
CRYSTALS
DIAMONDS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTAL MINERALS
ELEMENTS
ENERGY
ENERGY RANGE
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
MATERIALS
MINERALS
MONOCRYSTALS
NEON IONS
NONMETALS
PHOSPHORUS IONS
PHYSICAL PROPERTIES
SODIUM IONS