Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing
- University of North Carolina, Chapel Hill, North Carolina 27599-3255 (United States)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6048 (United States)
- Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194 (United States)
We describe a new method for removing thin, large area sheets of diamond from bulk or homoepitaxial diamond crystals. This method consists of an ion implantation step, followed by a selective etching procedure. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond that is buried at a controlled depth below the surface. For C implantations, this layer is graphitized by annealing in vacuum, and then etched in either an acid solution, or by heating at 550--600 [degree]C in oxygen. This process successfully lifts off the diamond plate above the graphite layer. For O implantations of a suitable dose (3[times]10[sup 17] cm[sup [minus]2] or greater), the liftoff is achieved by annealing in vacuum or flowing oxygen. In this case, the O required for etching of the graphitic layer is also supplied internally by the implantation. This liftoff method, combined with well-established homoepitaxial growth processes, has considerable potential for the fabrication of large area single crystalline diamond sheets.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6906290
- Journal Information:
- Applied Physics Letters; (United States), Vol. 61:26; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
DIAMONDS
ETCHING
ION IMPLANTATION
CARBON IONS
DAMAGE
EPITAXY
FABRICATION
FILMS
MONOCRYSTALS
OXYGEN IONS
CARBON
CHARGED PARTICLES
CRYSTALS
ELEMENTAL MINERALS
ELEMENTS
IONS
MINERALS
NONMETALS
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture
360605 - Materials- Radiation Effects