The separation of thin single crystal films from bulk diamond by MeV implantation
- Oak Ridge National Lab., TN (United States)
A method has been developed by which thin (1 {mu}m) plates can be lifted off a single crystal diamond. This technique involves implanting a diamond with high energy (4-5 MeV) ions (usually carbon or oxygen) in order to create a buried amorphous layer at a depth of 1-2 {mu}m. The buried amorphous region preferentially reacts with oxygen under the right conditions, resulting in a gaseous residue. By controlling this reaction, the amorphous layer can be etched away without affecting the still crystalline surface plate. In addition to the obvious uses of thin diamond windows, these lift-off plates can also be used as substrates for homoepitaxial growth by chemical vapor deposition. Free standing homoepitaxial diamond films, between 10-20 {mu}m thick, have been produced with this method.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 199753
- Report Number(s):
- CONF-941129-; TRN: 95:005652-0251
- Resource Relation:
- Conference: 13. international conference on the application of accelerators in research and industry, Denton, TX (United States), 7-10 Nov 1994; Other Information: PBD: 1994; Related Information: Is Part Of Thirteenth international conference on the application of accelerators in research and industry; Duggan, J.L.; Morgan, I.L. [eds.]; PB: 201 p.
- Country of Publication:
- United States
- Language:
- English
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