skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ion implantation of diamond: Damage, doping, and lift-off

Abstract

In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxialmore » films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.« less

Authors:
; ;  [1]; ; ;  [2]
  1. North Carolina Univ., Chapel Hill, NC (United States). Dept. of Physics and Astronomy
  2. Oak Ridge National Lab., TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
OSTI Identifier:
10103623
Report Number(s):
CONF-9308122-12
ON: DE94001133; CNN: Contract N00014-92-C-0081
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Conference
Resource Relation:
Conference: International Union of Materials Research Societies on advanced materials,Tokyo (Japan),31 Aug - 4 Sep 1993; Other Information: PBD: Sep 1993
Country of Publication:
United States
Language:
English
Subject:
07 ISOTOPES AND RADIATION SOURCES; 36 MATERIALS SCIENCE; DIAMONDS; ION IMPLANTATION; DAMAGE; FILMS; CARBON IONS; OXYGEN IONS; MONOCRYSTALS; ETCHING; REMOVAL; P-TYPE CONDUCTORS; N-TYPE CONDUCTORS; BORON IONS; SODIUM IONS; PHOSPHORUS IONS; ARSENIC IONS; 070205; 360605; INDUSTRIAL APPLICATIONS, RADIATION PROCESSING; RADIATION EFFECTS

Citation Formats

Parikh, N R, McGucken, E, Swanson, M L, Hunn, J D, White, C W, and Zuhr, R A. Ion implantation of diamond: Damage, doping, and lift-off. United States: N. p., 1993. Web.
Parikh, N R, McGucken, E, Swanson, M L, Hunn, J D, White, C W, & Zuhr, R A. Ion implantation of diamond: Damage, doping, and lift-off. United States.
Parikh, N R, McGucken, E, Swanson, M L, Hunn, J D, White, C W, and Zuhr, R A. 1993. "Ion implantation of diamond: Damage, doping, and lift-off". United States. https://www.osti.gov/servlets/purl/10103623.
@article{osti_10103623,
title = {Ion implantation of diamond: Damage, doping, and lift-off},
author = {Parikh, N R and McGucken, E and Swanson, M L and Hunn, J D and White, C W and Zuhr, R A},
abstractNote = {In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxial films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.},
doi = {},
url = {https://www.osti.gov/biblio/10103623}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Sep 01 00:00:00 EDT 1993},
month = {Wed Sep 01 00:00:00 EDT 1993}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: