Title: GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

Abstract

Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO₂ hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO₂ hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

Inventors:

Zhao, Yuji; Yang, Chen; Fu, Houqiang; Huang, Xuanqi; Fu, Kai

Issue Date:

Tue Nov 08 00:00:00 EST 2022

Research Org.:

Arizona State Univ., Tempe, AZ (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1986791

Patent Number(s):

11495694

Application Number:

17/372,810

Assignee:

Arizona Board of Regents on Behalf of Arizona State University (Scottsdale, AZ)

DOE Contract Number:  

AR0000868

Resource Type:

Patent

Resource Relation:

Patent File Date: 07/12/2021

Country of Publication:

United States

Language:

English