Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

Fu, Kai; Fu, Houqiang; Liu, Hanxiao; Alugubelli, Shanthan Reddy; Yang, Tsung-Han; Huang, Xuanqi; Chen, Hong; Baranowski, Izak; Montes, Jossue; Ponce, Fernando A.; Zhao, Yuji

doi:10.1063/1.5052479

Title: Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

Journal Article · Mon Dec 03 00:00:00 EST 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5052479· OSTI ID:1505568

Fu, Kai ^[1];

^[1];

^[2]; Alugubelli, Shanthan Reddy ^[2];

^[1];

^[1]; Baranowski, Izak ^[1]; Montes, Jossue ^[1];

^[3]; Zhao, Yuji ^[1]

Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering
Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
Arizona State Univ., Tempe, AZ (United States). Dept. of Physics

Here, to mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV and 3.0 eV, respectively. The forward current density increased slightly with the increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ~100 nm. This work provides valuable information of p-GaN regrowth and regrown GaN p-n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Aeronautics and Space Administration (NASA)

Grant/Contract Number:: AR0000868; ECCS-1542160

OSTI ID:: 1505568

Alternate ID(s):: OSTI ID: 1484237

Journal Information:: Applied Physics Letters, Vol. 113, Issue 23; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 44 works

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References (21)

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Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes Aragon, Andrew; Monavarian, Morteza; Stricklin, Isaac physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900757	journal	December 2019
Dopant profiling in p-i-n GaN structures using secondary electrons Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai Journal of Applied Physics, Vol. 126, Issue 1 https://doi.org/10.1063/1.5096273	journal	July 2019
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai Applied Physics Letters, Vol. 115, Issue 20 https://doi.org/10.1063/1.5127014	journal	November 2019
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Xiao, Ming; Du, Zhonghao; Xie, Jinqiao Applied Physics Letters, Vol. 116, Issue 5 https://doi.org/10.1063/1.5139906	journal	February 2020
Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device Huang, Xuanqi; Fang, Runchen; Yang, Chen Nanotechnology, Vol. 30, Issue 21 https://doi.org/10.1088/1361-6528/ab0484	journal	March 2019

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