Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation

Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan

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Title: Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation

Abstract

Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.

Inventors:: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan

Issue Date:: Tue Dec 19 00:00:00 EST 2023

Research Org.:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 2293985

Patent Number(s):: 11846024

Application Number:: 17/201,815

Assignee:: Ohio State Innovation Foundation (Columbus, OH)

DOE Contract Number:: AR0001036

Resource Type:: Patent

Resource Relation:: Patent File Date: 03/15/2021

Country of Publication:: United States

Language:: English

Citation Formats


                    Zhao, Hongping, Chen, Zhaoying, and Zhang, Yuxuan. Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.  United States: N. p., 2023. 
        Web.

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                    Zhao, Hongping, Chen, Zhaoying, & Zhang, Yuxuan. Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.  United States.

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                    Zhao, Hongping, Chen, Zhaoying, and Zhang, Yuxuan. Tue .  
        "Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation".  United States.  https://www.osti.gov/servlets/purl/2293985.

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@article{osti_2293985,

  title        = {Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation},

  author       = {Zhao, Hongping and Chen, Zhaoying and Zhang, Yuxuan},

  abstractNote = {Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Dec 19 00:00:00 EST 2023},

  month        = {Tue Dec 19 00:00:00 EST 2023}

}

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Title: Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation

Abstract

Citation Formats

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Method and System for the Localized Deposit of Metal on a Surface patent-application, August 2017

Method and Apparatus for Forming Device Quality Gallium Nitride Layers on Silicon Substrates patent-application, July 2016

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport journal, November 2012

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Mass Spectrometric Studies of Vapor-Phase Crystal Growth journal, January 1972

Molecular beam epitaxy growth of GaN, AlN and InN journal, January 2004

Growth of Nitride Films patent-application, November 2016

The Decomposition of Ammonia at high Temperatures. journal, April 1905

Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes journal, July 1999

Multi-Gas Distribution Injector for Chemical Vapor Deposition Reactors patent-application, December 2010

Method and Apparatus for Deposition on Large Area Substrates Having Reduced Gas Usage patent-application, February 2011

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Method for forming oxide thin film and the treatment of silicon substrate patent, September 1998

Laser Control of Chemical Reactions journal, March 1998

Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications journal, July 2013

Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition journal, October 2014

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5.0 kV breakdown-voltage vertical GaN p–n junction diodes
journal, February 2018

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes
journal, June 2016

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications
journal, January 2021

New results on HVPE growth of AlN, GaN, InN and their alloys
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Growth of nitride films
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Fast Growth of GaN Epilayers via Laser-Assisted Metal–Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications
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Carbon impurities and the yellow luminescence in GaN
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AlGaN/GaN HEMTs-an overview of device operation and applications
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Method and System for the Localized Deposit of Metal on a Surface
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Method and Apparatus for Forming Device Quality Gallium Nitride Layers on Silicon Substrates
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Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport
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Laser CVD device
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Mass Spectrometric Studies of Vapor-Phase Crystal Growth
journal, January 1972

Molecular beam epitaxy growth of GaN, AlN and InN
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Growth of Nitride Films
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The Decomposition of Ammonia at high Temperatures.
journal, April 1905

Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
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Multi-Gas Distribution Injector for Chemical Vapor Deposition Reactors
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Method and Apparatus for Deposition on Large Area Substrates Having Reduced Gas Usage
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Apparatus and Process for Atomic Layer Deposition with Horizontal Laser
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Method for forming oxide thin film and the treatment of silicon substrate
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Laser Control of Chemical Reactions
journal, March 1998

Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications
journal, July 2013

Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition
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