Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof

Zhao, Hongping; Chen, Zhaoying

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Title: Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof

Abstract

Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.

Inventors:: Zhao, Hongping; Chen, Zhaoying

Issue Date:: Tue Nov 01 00:00:00 EDT 2022

Research Org.:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1986774

Patent Number(s):: 11486039

Application Number:: 16/876,798

Assignee:: Ohio State Innovation Foundation (Columbus, OH)

DOE Contract Number:: GRT00052380

Resource Type:: Patent

Resource Relation:: Patent File Date: 05/18/2020

Country of Publication:: United States

Language:: English

Citation Formats


                    Zhao, Hongping, and Chen, Zhaoying. Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.  United States: N. p., 2022. 
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                    Zhao, Hongping, & Chen, Zhaoying. Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.  United States.

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                    Zhao, Hongping, and Chen, Zhaoying. Tue .  
        "Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof".  United States.  https://www.osti.gov/servlets/purl/1986774.

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@article{osti_1986774,

  title        = {Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof},

  author       = {Zhao, Hongping and Chen, Zhaoying},

  abstractNote = {Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Nov 01 00:00:00 EDT 2022},

  month        = {Tue Nov 01 00:00:00 EDT 2022}

}

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Similar Records

Title: Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof

Abstract

Citation Formats

5.0 kV breakdown-voltage vertical GaN p–n junction diodes journal, February 2018

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes journal, June 2016

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications journal, January 2021

New results on HVPE growth of AlN, GaN, InN and their alloys journal, May 2008

Growth of nitride films patent, March 2019

Fast Growth of GaN Epilayers via Laser-Assisted Metal–Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications journal, June 2017

Carbon impurities and the yellow luminescence in GaN journal, October 2010

AlGaN/GaN HEMTs-an overview of device operation and applications journal, June 2002

Method and System for the Localized Deposit of Metal on a Surface patent-application, August 2017

Method and Apparatus for Forming Device Quality Gallium Nitride Layers on Silicon Substrates patent-application, July 2016

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport journal, November 2012

Laser CVD device patent, February 1988

Mass Spectrometric Studies of Vapor-Phase Crystal Growth journal, January 1972

Molecular beam epitaxy growth of GaN, AlN and InN journal, January 2004

Growth of Nitride Films patent-application, November 2016

The Decomposition of Ammonia at high Temperatures. journal, April 1905

Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes journal, July 1999

Multi-Gas Distribution Injector for Chemical Vapor Deposition Reactors patent-application, December 2010

Method and Apparatus for Deposition on Large Area Substrates Having Reduced Gas Usage patent-application, February 2011

Apparatus and Process for Atomic Layer Deposition with Horizontal Laser patent-application, September 2013

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN journal, October 2018

When group-III nitrides go infrared: New properties and perspectives journal, July 2009

Laser Control of Chemical Reactions journal, March 1998

Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications journal, July 2013

Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition journal, October 2014

Optical bandgap energy of wurtzite InN journal, August 2002

Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride journal, June 2021

5.0 kV breakdown-voltage vertical GaN p–n junction diodes
journal, February 2018

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes
journal, June 2016

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications
journal, January 2021

New results on HVPE growth of AlN, GaN, InN and their alloys
journal, May 2008

Growth of nitride films
patent, March 2019

Fast Growth of GaN Epilayers via Laser-Assisted Metal–Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications
journal, June 2017

Carbon impurities and the yellow luminescence in GaN
journal, October 2010

AlGaN/GaN HEMTs-an overview of device operation and applications
journal, June 2002

Method and System for the Localized Deposit of Metal on a Surface
patent-application, August 2017

Method and Apparatus for Forming Device Quality Gallium Nitride Layers on Silicon Substrates
patent-application, July 2016

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport
journal, November 2012

Laser CVD device
patent, February 1988

Mass Spectrometric Studies of Vapor-Phase Crystal Growth
journal, January 1972

Molecular beam epitaxy growth of GaN, AlN and InN
journal, January 2004

Growth of Nitride Films
patent-application, November 2016

The Decomposition of Ammonia at high Temperatures.
journal, April 1905

Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
journal, July 1999

Multi-Gas Distribution Injector for Chemical Vapor Deposition Reactors
patent-application, December 2010

Method and Apparatus for Deposition on Large Area Substrates Having Reduced Gas Usage
patent-application, February 2011

Apparatus and Process for Atomic Layer Deposition with Horizontal Laser
patent-application, September 2013

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN
journal, October 2018

When group-III nitrides go infrared: New properties and perspectives
journal, July 2009

Laser Control of Chemical Reactions
journal, March 1998

Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications
journal, July 2013

Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition
journal, October 2014

Optical bandgap energy of wurtzite InN
journal, August 2002

Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride
journal, June 2021