skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

Patent ·
OSTI ID:1986791
; ; ; ;

Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000868
Assignee:
Arizona Board of Regents on Behalf of Arizona State University (Scottsdale, AZ)
Patent Number(s):
11,495,694
Application Number:
17/372,810
OSTI ID:
1986791
Resource Relation:
Patent File Date: 07/12/2021
Country of Publication:
United States
Language:
English

References (35)

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition journal July 2009
Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers journal October 2017
High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing journal August 2017
P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation journal December 2016
Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics journal February 2019
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates journal April 2017
Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit journal January 2018
Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes journal December 2019
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes journal November 2019
High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings journal January 2020
Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations journal May 2017
Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type Gallium Nitride as a current blocking layer patent-application May 2015
Ion implanted GaN MISFETs fabricated in Mg implanted layers activated by conventional rapid thermal annealing
  • Yoshino, Michitaka; Sugamata, Kota; Ikeda, Kiyoji
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 449 https://doi.org/10.1016/j.nimb.2019.04.008
journal June 2019
Growth and Characterization of Vertical and Lateral p-n Junctions Formed by Selective-Area p-GaN MOVPE on Patterned Templates journal November 2018
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes journal January 2018
Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth journal December 2018
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition journal March 2001
High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches journal March 2019
1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates journal September 2014
1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy journal August 2017
Reverse Leakage Analysis for As-grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes journal January 2020
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching journal February 2008
III-Nitride Vertical Transistor with Aperture Region Formed Using Ion Implantation patent-application April 2019
Selective-area regrowth of GaN field emission tips journal February 1997
GaN-Based Superjunction Vertical Power Transistor and Manufacturing Method Thereof patent-application December 2021
Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition journal December 2018
Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect journal June 2016
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges journal September 2016
Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET journal August 2015
Power Junction Field Effect Power Transistor with Highly Vertical Channel and Uniform Channel Opening patent-application June 2010
Trench formation and corner rounding in vertical GaN power devices journal May 2017
Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics journal November 2019
Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates journal January 2008
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices journal June 2019
1.8 mΩ·cm 2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation journal April 2015

Similar Records

Related Subjects