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Title: Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof

Patent ·
OSTI ID:1986774

Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.

Research Organization:
The Ohio State Univ., Columbus, OH (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
GRT00052380
Assignee:
Ohio State Innovation Foundation (Columbus, OH)
Patent Number(s):
11,486,039
Application Number:
16/876,798
OSTI ID:
1986774
Resource Relation:
Patent File Date: 05/18/2020
Country of Publication:
United States
Language:
English

References (27)

5.0 kV breakdown-voltage vertical GaN p–n junction diodes journal February 2018
Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes journal June 2016
Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications journal January 2021
New results on HVPE growth of AlN, GaN, InN and their alloys journal May 2008
Growth of nitride films patent March 2019
Fast Growth of GaN Epilayers via Laser-Assisted Metal–Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications journal June 2017
Carbon impurities and the yellow luminescence in GaN journal October 2010
AlGaN/GaN HEMTs-an overview of device operation and applications journal June 2002
Method and System for the Localized Deposit of Metal on a Surface patent-application August 2017
Method and Apparatus for Forming Device Quality Gallium Nitride Layers on Silicon Substrates patent-application July 2016
Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport journal November 2012
Laser CVD device patent February 1988
Mass Spectrometric Studies of Vapor-Phase Crystal Growth journal January 1972
Molecular beam epitaxy growth of GaN, AlN and InN journal January 2004
Growth of Nitride Films patent-application November 2016
The Decomposition of Ammonia at high Temperatures. journal April 1905
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes journal July 1999
Multi-Gas Distribution Injector for Chemical Vapor Deposition Reactors patent-application December 2010
Method and Apparatus for Deposition on Large Area Substrates Having Reduced Gas Usage patent-application February 2011
Apparatus and Process for Atomic Layer Deposition with Horizontal Laser patent-application September 2013
Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN journal October 2018
When group-III nitrides go infrared: New properties and perspectives journal July 2009
Laser Control of Chemical Reactions journal March 1998
Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications journal July 2013
Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition journal October 2014
Optical bandgap energy of wurtzite InN journal August 2002
Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride journal June 2021