MIS-based sensors with hydrogen selectivity

Li, Dongmei; Medlin, J. William; McDaniel, Anthony H.; Bastasz, Robert J.

Title: MIS-based sensors with hydrogen selectivity

Patent · Tue Mar 11 00:00:00 EDT 2008

OSTI ID:970537

Li, Dongmei ^[1]; Medlin, J. William ^[1]; McDaniel, Anthony H. ^[2]; Bastasz, Robert J. ^[2]

Boulder, CO
Livermore, CA

The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.

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Research Organization:: Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: The Regents of the University of Colorado (Boulder, CO)

Patent Number(s):: 7,340,938

Application Number:: 11/361,310

OSTI ID:: 970537

Country of Publication:: United States

Language:: English

References (36)

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