Method of improving field emission characteristics of diamond thin films

Patent · Fri Jan 01 00:00:00 EST 1999

OSTI ID:872282

Krauss, Alan R ^[1]; Gruen, Dieter M ^[2]

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1. Naperville, IL
2. Downer Grove, IL

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• DOE Contract Number: W-31109-ENG-38
• Assignee: University of Chicago (Chicago, IL)
• Patent Number(s): US 5902640
• OSTI ID: 872282
• Country of Publication: United States
• Language: English

Related Subjects

method
improving
field
emission
characteristics
diamond
films
preparing
improved
properties
film
substrate
atmosphere
hydrogen
molecular
atomic
provided
deposited
form
absorbed
reduce
function
enhance
addition
intergranular
surfaces
electrical
conductivity
treated
microtip
array
flat
panel
display
field emission
electrical conductivity
diamond film
flat panel
panel display
emission characteristics
emission properties
deposited film
improved field
preparing diamond
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