Method of improving field emission characteristics of diamond thin films
Patent
·
OSTI ID:350330
A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.
- Research Organization:
- University of Chicago
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- Univ. of Chicago, IL (United States)
- Patent Number(s):
- US 5,902,640/A/
- Application Number:
- PAN: 8-684,426
- OSTI ID:
- 350330
- Country of Publication:
- United States
- Language:
- English
Similar Records
Method of improving field emission characteristics of diamond thin films
Electron field emission for ultrananocrystalline diamond films
Method for the preparation of nanocrystalline diamond thin films
Patent
·
Thu Dec 31 23:00:00 EST 1998
·
OSTI ID:872282
Electron field emission for ultrananocrystalline diamond films
Journal Article
·
Wed Feb 28 23:00:00 EST 2001
· Journal of Applied Physics
·
OSTI ID:40204930
Method for the preparation of nanocrystalline diamond thin films
Patent
·
Tue Jun 30 00:00:00 EDT 1998
·
OSTI ID:672601