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Title: Method of improving field emission characteristics of diamond thin films

Abstract

A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

Inventors:
;
Publication Date:
Research Org.:
Univ. of Chicago, IL (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
350330
Patent Number(s):
US 5,902,640/A/
Application Number:
PAN: 8-684,426
Assignee:
Univ. of Chicago, IL (United States) PTO; SCA: 360606; 360601; 426000; PA: EDB-99:063556; SN: 99002098247
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 11 May 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; DIAMONDS; FIELD EMISSION; SUBSTRATES; MOLYBDENUM; TUNGSTEN; SILICON; NICKEL; WORK FUNCTIONS; ELECTRIC CONDUCTIVITY; DISPLAY DEVICES; FABRICATION; ABSORPTION; HYDROGEN

Citation Formats

Krauss, A.R., and Gruen, D.M. Method of improving field emission characteristics of diamond thin films. United States: N. p., 1999. Web.
Krauss, A.R., & Gruen, D.M. Method of improving field emission characteristics of diamond thin films. United States.
Krauss, A.R., and Gruen, D.M. Tue . "Method of improving field emission characteristics of diamond thin films". United States.
@article{osti_350330,
title = {Method of improving field emission characteristics of diamond thin films},
author = {Krauss, A.R. and Gruen, D.M.},
abstractNote = {A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 11 00:00:00 EDT 1999},
month = {Tue May 11 00:00:00 EDT 1999}
}