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Title: Method of improving field emission characteristics of diamond thin films

Abstract

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Inventors:
 [1];  [2]
  1. (Naperville, IL)
  2. (Downer Grove, IL)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
872282
Patent Number(s):
US 5902640
Assignee:
University of Chicago (Chicago, IL) ANL
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; improving; field; emission; characteristics; diamond; films; preparing; improved; properties; film; substrate; atmosphere; hydrogen; molecular; atomic; provided; deposited; form; absorbed; reduce; function; enhance; addition; intergranular; surfaces; electrical; conductivity; treated; microtip; array; flat; panel; display; field emission; electrical conductivity; diamond film; flat panel; panel display; emission characteristics; emission properties; deposited film; improved field; preparing diamond; /427/

Citation Formats

Krauss, Alan R., and Gruen, Dieter M. Method of improving field emission characteristics of diamond thin films. United States: N. p., 1999. Web.
Krauss, Alan R., & Gruen, Dieter M. Method of improving field emission characteristics of diamond thin films. United States.
Krauss, Alan R., and Gruen, Dieter M. Fri . "Method of improving field emission characteristics of diamond thin films". United States. https://www.osti.gov/servlets/purl/872282.
@article{osti_872282,
title = {Method of improving field emission characteristics of diamond thin films},
author = {Krauss, Alan R. and Gruen, Dieter M.},
abstractNote = {A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}

Patent:

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