Microstructure and field emission of nanocrystalline diamond prepared from C{sub 60} precursors

Journal Article · Fri Aug 01 04:00:00 EDT 1997 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1837864· OSTI ID:536452

Zhou, D; Krauss, A R; McCauley, T G; Gruen, D M ^[1]; Corrigan, T D ^[1]; Chang, R P.H. ^[2]

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1. Argonne National Lab., IL (United States)
2. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering

Cold cathode electron field emission from nanocrystalline diamond thin films produced by microwave plasma-enhanced CVD with C{sub 60} as the growth precursor has been observed. The lowest onset field obtained is about 2 V/{micro}m, and a 4 V/{micro}m field is required to emit a current density of 0.4 mA/cm{sup 2}. It has been found that hydrogen content of the plasma, which can be varied over a wide range, strongly affects the microstructure and electron field emission properties of the nanocrystalline diamond thin films. This is an important new development which allows one to exercise powerful control over many properties of diamond films. Based on TEM characterization and field emission measurements, the effects of the structural defects and the orientations of the diamond grains on the field emission properties are discussed.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 536452
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 8 Vol. 144; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
DIAMONDS
ELECTRON EMISSION
FIELD EMISSION
FULLERENES
MICROSTRUCTURE
MICROWAVE HEATING
PLASMA HEATING