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Title: Method for the preparation of nanocrystalline diamond thin films

Patent ·
OSTI ID:871657

A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
DOE Contract Number:
W-31109-ENG-38
Assignee:
University Of Chicago (Chicago, IL)
Patent Number(s):
US 5772760
OSTI ID:
871657
Country of Publication:
United States
Language:
English

References (15)

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Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays journal December 1995
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Solid C60: a new form of carbon journal September 1990