Diamond film growth argon-carbon plasmas
Patent
·
OSTI ID:321209
A method and system are disclosed for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate. 29 figs.
- Research Organization:
- University of Chicago
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- Univ. of Chicago, IL (United States)
- Patent Number(s):
- US 5,849,079/A/
- Application Number:
- PAN: 8-417,154
- OSTI ID:
- 321209
- Country of Publication:
- United States
- Language:
- English
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