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Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modificaitons.

Journal Article · · Diamond Related Mater.
The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is, the turn-on field decreased from 23.2 V/{micro}m to 12.5 V/{micro}m and the electron field emission current density increased from 10E-5 mA/cm{sup 2} to 1 x 10E-2 mA/cm{sup 2}. The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp{sup 3}-bonded carbons into sp{sup 2}-bonded ones) in UNCD films.
Research Organization:
Argonne National Laboratory (ANL)
Sponsoring Organization:
SC; National Science Council - Taiwan
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1010906
Report Number(s):
ANL/MSD/JA-69360
Journal Information:
Diamond Related Mater., Journal Name: Diamond Related Mater. Journal Issue: 2 ; Feb. 2011 Vol. 20; ISSN 0925-9635
Country of Publication:
United States
Language:
ENGLISH