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Morophology and electronic straucture in nitrogen-doped ultrananocrystalline diamond.

Journal Article · · Appl. Phys. Lett.
OSTI ID:949657
Ultrananocrystalline diamond (UNCD) thin films consist of 2-5 nm grains of pure sp{sub 3}-bonded carbon and {approx}0.5-nm-wide grain boundaries with a disordered mixture of sp{sub 2}- and sp{sub 3}-bonded carbon. UNCD exhibits many interesting materials properties that are a direct consequence of its nanoscale morphology. In this work, we report the changes in morphology induced in UNCD by the addition of nitrogen gas to the Ar/CH{sub 4} microwave plasma, as studied using high-resolution transmission electron microscopy and nanoprobe-based electron energy-loss spectroscopy. Both the grain size and grain-boundary widths increase with the addition of N{sub 2}, but the overall bonding structure in both regions remains mostly unchanged. These results are used to explain the variation of materials properties of nitrogen-incorporated UNCD films.
Research Organization:
Argonne National Laboratory (ANL)
Sponsoring Organization:
SC
DOE Contract Number:
AC02-06CH11357
OSTI ID:
949657
Report Number(s):
ANL/MSD/JA-42997
Journal Information:
Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: 12 ; Sep. 16, 2002 Vol. 81; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
ENGLISH