Effect of nitrogen addition to Ar/CH{sub 4} plasmas on the growth, morphology and field emission of ultrananocrystalline diamond.

Journal Article · Tue Jan 01 04:00:00 EST 2002 · Diamond Related Mater.

DOI:https://doi.org/10.1016/S0925-9635(01)00517-9· OSTI ID:942975

Corrigan, T D; Gruen, D M; Krauss, A R; Zapol, P; Chang, R P. H.

The effect of the addition of nitrogen to plasmas during the CVD growth of diamond films on field emission properties has been studied. Ultrananocrystalline diamond with 5-15 nm grain size has been grown with the incorporation of nitrogen up to 8 x 10{sup 20} atoms/cm{sup 3}. Field emission onsets as low as 2 V/{mu}m have been achieved. UV Raman and electron energy loss spectroscopy (EELS) measurements show an increase in the sp{sup 2} content in the films with nitrogen in the plasma compared to films without N{sub 2} addition. A model is discussed in which the nitrogen preferentially enters the grain boundaries and promotes sp{sup 2} bonding in the neighboring carbon atoms. The increase in the sp{sup 2} content appears to improve the field emission properties of the films.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC; DOD
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 942975
• Report Number(s): ANL/CHM/JA-36425
• Journal Information: Diamond Related Mater., Journal Name: Diamond Related Mater. Journal Issue: 1 ; Jan. 2002 Vol. 11; ISSN 0925-9635
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
ATOMS
BONDING
CARBON
CHEMICAL VAPOR DEPOSITION
DIAMONDS
ELECTRONS
ENERGY-LOSS SPECTROSCOPY
FIELD EMISSION
GRAIN BOUNDARIES
GRAIN SIZE
GROWTH
MORPHOLOGY
NITROGEN
NITROGEN ADDITIONS
PLASMA
THIN FILMS