Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition process

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119607· OSTI ID:526860

Lee, J S; Liu, K S ^[1]; Lin, I N ^[2]

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1. Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, Republic of (China)
2. Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan 300, Republic of (China)

Selected area deposition of diamond films on silicon substrates was successfully achieved using the patterned Pt layer as a nucleation inhibitor in the chemical vapor deposition process. The planar diamond film array thus made possesses good electron field emission properties, that is, emission current density of (J{sub e}){sub Si}=150{mu}A/cm{sup 2} (under 23.6 V/{mu}m) and turn on field of (E{sub o}){sub Si}=10V/{mu}m. Precoating a thin Au layer (20 nm) on a Si surface further increased the emission current density to (J{sub e}){sub Au/Si}=960{mu}A/cm{sup 2} (under 23.6 V/{mu}m) with (E{sub o}){sub Au/Si}=10V/{mu}m. The effective work functions ({phi}) estimated by Fowler{endash}Nordheim plots of the I{endash}V characteristics are ({phi}){sub Si}=0.059eV and ({phi}){sub Au/Si}=0.085eV. The emission properties of both planar diamond film arrays satisfy the requirement for applying as the electron emitters in the flat panel displays. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526860
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
DIAMONDS
ELECTRIC CONDUCTIVITY
ELECTRON EMISSION
THIN FILMS
WORK FUNCTIONS