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Title: Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

Patent ·
OSTI ID:871350
 [1];  [2];  [2]
  1. Sandia Park, NM
  2. Albuquerque, NM
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A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5712865
OSTI ID:
871350
Country of Publication:
United States
Language:
English

References (9)

High‐efficiency, continuous‐wave, epitaxial surface‐emitting laser with pseudomorphic InGaAs quantum wells journal April 1989
Physics of semiconductor microcavity lasers journal June 1995
Many body effects in the temperature dependence of threshold in a vertical‐cavity surface‐emitting laser journal May 1995
Effects of quantum well subband structure on the temperature stability of vertical‐cavity semiconductor lasers journal June 1995
200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers journal May 1995
Lasing threshold in quantum well surface‐emitting lasers: Many‐body effects and temperature dependence journal December 1989
Temperature characteristics of a vertical-cavity surface-emitting laser with a broad-gain bandwidth journal June 1995
Semiconductor Laser Diodes book January 1994
Vertical‐cavity surface‐emitting lasers with thermally stable electrical characteristics journal March 1995

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temperature-insensitive
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method
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vcsel
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quantum-well
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high-order
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cavity surface
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